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| TP0101T/TS Vishay Siliconix P-Channel 20-V (D-S) MOSFET, Low-Threshold PRODUCT SUMMARY ID (A) VDS (V) -20 rDS(on) (W) 0.65 @ VGS = -4.5 V 0.85 @ VGS = -2.5 V TP0101T -0.6 -0.5 TP0101TS -1.0 -0.9 FEATURES D D D D D High-Side Switching Low On-Resistance: 0.45 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 32 ns 2.5-V or Lower Operation BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems, DC/DC Converters D Power Supply Converter Circuits D Load/Power Switching-Cell Phones, Pagers TO-236 (SOT-23) Top View G 1 3 S 2 D Marking Code: TP0101T: POwll TP0101TS: PSwll w = Week Code l = Lot Traceability ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b _ Pulsed Drain Currenta TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS TA= 25_C TA= 70_C PD TJ, Tstg TP0101T -20 "8 -0.6 -0.48 -3 -0.6 0.35 0.22 -55 to 150 TP0101TSc -20 "8 -1.0 -0.8 -3 -1.0 1.0 0.65 -55 to 150 Unit V A Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range W _C THERMAL RESISTANCE RATINGS Parameter Thermal Resistance, Junction-to-Ambientb Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 10 sec. c. Copper lead frame. Document Number: 70229 S-04279--Rev. D, 16-Jul-01 www.vishay.com Symbol RthJA TP0101T 357 TP0101TSc 125 Unit _C/W 11-1 TP0101T/TS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = -10 mA VDS = VGS, ID = -50 mA VDS = 0 V, VGS = "8 V VDS = -9.6 V, VGS = 0 V TJ = 55_C VDS v -5 V, VGS = -4.5 V ID(on) VDS v -5 V, VGS = -2.5 V VGS = -4.5 V, ID = -0.6 A rDS(on) gfs VSD VGS = -2.5 V, ID = -0.5 A VDS = -5 V, ID = -0.6 A IS = -0.6 A, VGS = 0 V -2.5 -0.5 0.45 0.69 1300 -0.9 -1.2 0.65 0.85 W mS V A -20 -0.5 -26 -0.9 -1.5 "100 -1 -10 mA m V nA Symbol Test Conditions Min Typ Max Unit On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltagea Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = -6 V, VGS = 0, f = 1 MHz VDS = -6 V, VGS =-4.5 V ID ^ -0.6 A 2020 180 720 110 80 30 pF 3000 pC Switching td(on) Turn-On Time tr td(off) tf Notes a. Pulse test: PW v300 ms duty cycle v2%. VDD = -6 V, RL = 12 W ID ^ -0.6 A, VGEN = -4.5 V RG = 6 W 7 25 19 9 12 35 ns 30 15 VPLJ01 Turn-Off Time www.vishay.com 11-2 Document Number: 70229 S-04279--Rev. D, 16-Jul-01 TP0101T/TS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) -6 Output Characteristics -2.0 Transfer Characteristics TA = -55_C -5 ID - Drain Current (A) VGS = -5 V -4.5 V ID - Drain Current (A) -4 V -1.5 25_C 125_C -1.0 -4 -3.5 V -3 V -3 -2 -2.5 V -2 V -1.5 V -0.5, 1 V -0.5 -1 0 0 -1 -2 -3 -4 0.0 0.0 - 0.5 -1.0 -1.5 - 2.0 - 2.5 - 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current -4 rDS(on) - Drain-Source On-Resistance ( ) 350 300 -3 C - Capacitance (pF) 250 200 150 Capacitance VGS = 0 f = 1 MHz -2 VGS = -2.5 V -1 Ciss 100 Coss 50 Crss VGS = -4.5 V 0 0 -1 -2 -3 -4 -5 0 0 -3 -6 -9 - 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) -7 -6 VGS - Gate-to-Source Voltage (V) -5 -4 -3 -2 -1 0 0 600 VDS = -6 V ID = -0.5 A Gate Charge 1.7 On-Resistance vs. Junction Temperature 1.5 rDS(on) - On-Resistance ( ) (Normalized) VGS = -4.5 V ID = -0.5 A 1.3 1.1 0.9 1200 1800 2400 3000 0.7 -50 0 50 100 150 Qg - Total Gate Charge (pC) TJ - Junction Temperature (_C) Document Number: 70229 S-04279--Rev. D, 16-Jul-01 www.vishay.com 11-3 TP0101T/TS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Source-Drain Diode Forward Voltage -10 3.0 On-Resistance vs. Gate-to-Source Voltage 2.5 IS - Source Current (A) TJ = 50_C -1 rDS(on) - On-Resistance ( ) 2.0 1.5 - 0.1 TJ = 25_C 1.0 ID = -0.5 A 0.5 -0.01 0.0 - 0.5 -1.0 - 1.5 - 2.0 - 2.5 0.0 0 -1 -2 -3 -4 -5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.34 10 Single Pulse Power 0.24 VGS(th) - Variance (V) ID = -50 mA 0.14 8 6 0.04 4 TA = 25_C Single Pulse -0.06 2 -0.16 -50 0 0 50 100 150 0.001 0.01 0.1 Time (sec) 1 10 100 TJ - Junction Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 30 www.vishay.com 11-4 Document Number: 70229 S-04279--Rev. D, 16-Jul-01 |
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